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高频薄膜电容，纯铜引线，适用于高频振荡电路，如无线充用，加湿器等，具有体积小，高频损耗小。还可以用此薄膜电容替代贴片电容。薄膜电容具有比NPO贴片电容低损耗和更好的高频电性稳定性，缺点是不能自动贴片安装。低廉的价格，成为天价NPO贴片电容的替代者。
CB21B金属化聚丙烯膜电容器(盒式高频)
metallized polypropylene film capacitor(Box-type)
█技术要求 Specifications
引用标准Reference Standard | GB/T 0190 (IEC 06384-16) | ||||||
气候类别Climatic Category | 40/105/21 | ||||||
额定温度Rated Temperature | 85℃ | ||||||
工作温度范围Operating Temperature Range | -40℃~105℃（85~105℃：decreasing factor 1.25% per℃ for Ur） | ||||||
额定电压Rated Voltage | 100V、250V、400V、630V、1000V、1250V | ||||||
电容量范围Capacitance Range | 0.0010?F~4.7?F | ||||||
电容量偏差Capacitance Tolerance | ±5％(J)、±10％(K) | ||||||
耐电压Voltage Proof | 1.6 Ur(5s) | ||||||
损耗角正切Dissipation Factor | ≤0.1％(20℃,1kHz),Or ≤0.3％(20℃,100kHz) | ||||||
绝缘电阻Insulation Resistance
| ≥10000MΩ,Cr≤0.33?F (20℃,10V,1min) ≥3000s, Cr＞0.33?F | ||||||
脉冲爬升速率Maximum Pulse Rise Time(dV/dt):若实际工作电压U比额定电压Ur低，电容器可工作在更高的dV/dt场合，这样dV/dt允许值应为右表值乘以Ur/U。 If the working voltage(U) is lower than the rated voltage(Ur),the capacitor can be worked at a higher dV/dt. In this case, the maximum allowed dV/dt is obtain by multiplying the right value with Ur/U. | Ur(V) | Dv/Dt(V/?S) | |||||
P=5 | P=7.5 | P=10 | P=15 | P=20 | P=27.5 | ||
100/250 | 620 | 600 | 560 | 310 | ---- | ---- | |
400 | 900 | 850 | 780 | 600 | 430 | 280 | |
630 | ---- | 1350 | 1180 | 720 | 400 | 260 | |
1000 | ---- | ----- | 1800 | 1360 | 840 | 380 | |
1250 | ---- | ----- | ----- | 1500 | 900 | 400 | |
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